Ion Implantation

NV-GSD200E 90KEV high current implanter
NVGSD200 source and accelerator system
Enhanced bernas source w/ dual vaporizers
Bypass values and Nitrogen purge
Variable aperture extraction electrode
Enhanced low energy beamline
90Kv single stage extraction
Triple indexed mass analysis magnet and p/s
90kv post acceleration electrode assy. (180Kv system only)
NVGSD200 end station four cassette capacity
Automatic notch alignment capability with buffer cassette
Integrated dummy wafer fill-in capacity
In-Air, In-Vacuum high throughput wafer handling area
Real time patented dose control
Real time beam profiler
High Vac pump
Source roughing pump
End station Cryo pump
Beamline cryo pump
End station roughing pump
Vintage Jan 1998