Ion Implantation

Vintage 2001
Currently configured for 4” wafer
Rotating, uncooled platen with silicon-coated 6 point clamp
225 wafer capacity highly polished load locks
Tungsten Bernas Ion source
HP gas box
Inert (Ar) connection
2 stage low beam aperture
Ion beam filter
End station pumping: 2 varian 300HT loadlock turbo, 1 CT-10 chamber Cryo
Metals reduction kit
Si-coated acceleration colum
Graphite target chamber side wall shields
Resolving chamber cold cathode vacuum gauge
SECSII host communications
V11 s/w, real time beam, purity check s/w.